Tunneling full-wave infrared rectenna

Davids, Paul; Starbuck, Andrew Lea; Jarecki, Jr., Robert L.; Peters, David W.

Title: Tunneling full-wave infrared rectenna

Patent · Tue Apr 05 00:00:00 EDT 2022

OSTI ID:1892801

Davids, Paul; Starbuck, Andrew Lea; Jarecki, Jr., Robert L.; Peters, David W.

A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Number(s):: 11,296,240

Application Number:: 16/702,732

OSTI ID:: 1892801

Resource Relation:: Patent File Date: 12/04/2019

Country of Publication:: United States

Language:: English

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