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Tunneling full-wave infrared rectenna

Patent ·
OSTI ID:1892801
A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
11,296,240
Application Number:
16/702,732
OSTI ID:
1892801
Country of Publication:
United States
Language:
English

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