Photovoltaic effect on silicon-alumina-ferromagnet tunnel junction providing insights about spin-dependent molecular spintronics solar cells
The study focuses on the observation of the photovoltaic (PV) effect on Si/AlOx/FM semiconductor-insulator-ferromagnetic metal (SIFM) structure. Utilization of ~10 nm NiFe film as the top FM layer was permeable for sufficient light radiation necessary for reaching the silicon substrate for the generation of electron-hole pairs upon photoexcitation. The effect of light intensity and magnetic field was studied on the SIFM's PV response. We also investigated the role of silicon doping and the AlOx tunnel barrier between Si and FM for exploring suitable band bending necessary for separating the electron-hole pairs. Increasing the dopant density in Si and a damaged AlOx tunnel barrier quenched the PV effect. FMIFM was also studied to gain deeper mechanistic insights into the spin-dependent photovoltaic effect observed on FM/AlOx/FM tunnel junction-based molecular spintronics devices. Bridging of magnetic molecules between the Si and FM electrodes of SIFM increased the overall device current by establishing additional parallel conduction channels along with the AlOx tunnel barrier. However, SIFM with molecular conduction channels did not produce a PV effect. This study reported the PV effect on well-designed SIFM and opened possibilities of exploring new systems. More importantly, this paper provided insights into the role of molecule-induced exchange coupling in transforming an ordinary cheap and widely available ferromagnet into a semiconductor-like material capable of showing PV.
- Research Organization:
- University of the District of Columbia, Washington, DC (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0003945
- OSTI ID:
- 2319013
- Journal Information:
- AIP Advances, Vol. 14, Issue 3; ISSN 2158--3226
- Country of Publication:
- United States
- Language:
- English
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