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Title: Tunneling full-wave infrared rectenna

Abstract

A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.

Inventors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1892801
Patent Number(s):
11,296,240
Application Number:
16/702,732
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/04/2019
Country of Publication:
United States
Language:
English

Citation Formats

Davids, Paul, Starbuck, Andrew Lea, Jarecki, Jr., Robert L., and Peters, David W. Tunneling full-wave infrared rectenna. United States: N. p., 2022. Web.
Davids, Paul, Starbuck, Andrew Lea, Jarecki, Jr., Robert L., & Peters, David W. Tunneling full-wave infrared rectenna. United States.
Davids, Paul, Starbuck, Andrew Lea, Jarecki, Jr., Robert L., and Peters, David W. 2022. "Tunneling full-wave infrared rectenna". United States. https://www.osti.gov/servlets/purl/1892801.
@article{osti_1892801,
title = {Tunneling full-wave infrared rectenna},
author = {Davids, Paul and Starbuck, Andrew Lea and Jarecki, Jr., Robert L. and Peters, David W.},
abstractNote = {A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.},
doi = {},
url = {https://www.osti.gov/biblio/1892801}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 05 00:00:00 EDT 2022},
month = {Tue Apr 05 00:00:00 EDT 2022}
}

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