Semiconductor systems utilizing materials that form rectifying junctions in both n and p-type doping regions, whether metallurgically or field induced, and methods of use
Disclosed are semiconductor systems, such as integrated circuits utilizing Schottky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced n and p-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG47-93R701314
- OSTI ID:
- 20080547
- Resource Relation:
- Other Information: PBD: 18 Jul 2000
- Country of Publication:
- United States
- Language:
- English
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