Schottky barrier MOSFET systems and fabrication thereof
(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.
- Research Organization:
- James D Welch
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG47-93R701314
- Assignee:
- KCSO; SN: 97001846770; PA: EDB-97:126627; SCA: 426000
- Patent Number(s):
- US 5,663,584/A/
- Application Number:
- PAN: 8-368,149
- OSTI ID:
- 527786
- Country of Publication:
- United States
- Language:
- English
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