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Regenerative switching CMOS system

Patent ·
OSTI ID:871599
 [1]
  1. 10328 Pinehurst Ave., Omaha, NE 68124
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Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Research Organization:
James D Welch
DOE Contract Number:
FG47-93R701314
Assignee:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
Patent Number(s):
US 5760449
OSTI ID:
871599
Country of Publication:
United States
Language:
English

References (5)

Metallurgical and electrical properties of chromium silicon interfaces journal January 1980
Compound formation between amorphous silicon and chromium journal December 1980
The metal-semiconductor contact: an old device with a new future journal March 1970
Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer journal December 1976
SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain journal January 1968

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