Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation

Potts, Alexander M.; Bajaj, Sanyam; Daughton, David R.; Allerman, Andrew A.; Armstrong, Andrew M.; Razzak, Towhidur; Sohel, Shahadat H.; Rajan, Siddharth

doi:10.1109/ted.2021.3095138

Al_0.7Ga_0.3N MESFET With All-Refractory Metal Process for High Temperature Operation

Journal Article · Thu Jul 15 00:00:00 EDT 2021 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/ted.2021.3095138· OSTI ID:1822244

Potts, Alexander M. ^[1]; Bajaj, Sanyam ^[2]; Daughton, David R. ^[3]; Allerman, Andrew A. ^[4]; Armstrong, Andrew M. ^[4]; Razzak, Towhidur ^[5]; Sohel, Shahadat H. ^[5]; Rajan, Siddharth ^[5]

Lake Shore Cryotronics, Westerville, OH (United States); Univ. of California, Santa Barbara, CA (United States)
The Ohio State Univ., Columbus, OH (United States); Intel Corporation, Hillsboro, OR (United States)
Lake Shore Cryotronics, Westerville, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The Ohio State Univ., Columbus, OH (United States)

In this work, ultrawide bandgap Al_0.7Ga_0.3N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 mA/mm at 300 K and 156 mA/mm at 675 K in the ON-state (25% reduction). Drain and gate currents are only weakly temperature-dependent, suggesting potential for engineering temperature invariant operation. The ON-/ OFF-ratio is limited by OFF-state leakage through the gate, which is attributed to damage from sputter deposition. Future work using refractory metals with larger work functions that are deposited by electron beam deposition is proposed.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: NA0003525

OSTI ID:: 1822244

Report Number(s):: SAND--2021-10278J; 699760

Journal Information:: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 9 Vol. 68; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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