Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Klein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M.; Allerman, Andrew A.; Abate, Vincent M.; Fortune, Torben R.; Baca, Albert G.

doi:10.1063/1.5064543

Enhancement-mode Al_0.85Ga_0.15N/Al_0.7Ga_0.3N high electron mobility transistor with fluorine treatment

Journal Article · Tue Mar 19 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5064543· OSTI ID:1507744

Klein, Brianna A. ^[1]; ^[1]; ^[1]; Allerman, Andrew A. ^[1]; Abate, Vincent M. ^[1]; ^[1]; Baca, Albert G. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Enhancement-mode Al_0.7Ga_0.3N-channel high electron mobility transistors (HEMTs) were achieved here through a combination of recessed etching and fluorine ion deposition to shift the threshold voltage (V_TH) relative to depletion-mode devices by +5.6 V to V_TH = +0.5 V. Accounting for the threshold voltage shift (ΔV_TH), current densities of approximately 30 to 35 mA/mm and transconductance values of 13 mS/mm were achieved for both the control and enhancement mode devices at gate biases of 1 V and 6.6 V, respectively. Little hysteresis was observed for all devices, with voltage offsets of 20 mV at drain currents of 1.0 × 10^-3 mA/mm. Enhancement-mode devices exhibited slightly higher turn-on voltages (+0.38 V) for forward bias gate currents. Piecewise evaluation of a threshold voltage model indicated a ΔV_TH of +3.3 V due to a gate recess etching of 12 nm and an additional +2.3 V shift due to fluorine ions near the AlGaN surface.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1507744

Alternate ID(s):: OSTI ID: 1501722

Report Number(s):: SAND2019--2413J; 673155

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (1)

High‐Temperature Operation of Al _x Ga _{1− x} N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides Mollah, Shahab; Hussain, Kamal; Floyd, Richard physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900802	journal	February 2020

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Related Subjects

36 MATERIALS SCIENCE
electric currents
electric measurements
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field effect transistors
secondary ion mass spectroscopy
semiconductors
transconductance
two-dimensional electron gas