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Title: Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

Journal Article · · Journal of Electronic Materials
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
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Gate length dependent (80 nm–5000 mm) radio frequency measurements to extract saturation velocity are reported for Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors fabricated into radio frequency devices using electron beam lithography. Direct current characterization revealed the threshold voltage shifting positively with increasing gate length, with devices changing from depletion mode to enhancement mode when the gate length was greater than or equal to 450 nm. Transconductance varied from 10 mS/mm to 25 mS/mm, with the 450 nm device having the highest values. Maximum drain current density was 268 mA/mm at 10 V gate bias. Scattering-parameter characterization revealed a maximum unity gain bandwidth ($$f_T$$) of 28 GHz, achieved by the 80 nm gate length device. A saturation velocity value of 3.8 × 106 cm/s, or 35% of the maximum saturation velocity reported for GaN, was extracted from the $$f_T$$ measurements

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1542138
Report Number(s):
SAND-2019-7435J; 676947
Journal Information:
Journal of Electronic Materials, Vol. 48, Issue 9; ISSN 0361-5235
Publisher:
SpringerCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Figures / Tables (6)

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Related Subjects

36 MATERIALS SCIENCE
HEMT
AlGaN
RF
saturation velocity