Au-gated SrTiO{sub 3} field-effect transistors with large electron concentration and current modulation

Journal Article · Mon Sep 15 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896275· OSTI ID:22303538

Verma, Amit; Jena, Debdeep ^[1]; Raghavan, Santosh; Stemmer, Susanne ^[2]

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1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
2. Materials Department, University of California, Santa Barbara, California 93106 (United States)

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO{sub 3} thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO{sub 3}. As a result of the large dielectric constant of SrTiO{sub 3} and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ∼1.6 × 10{sup 14 }cm{sup −2} electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ∼68 mA/mm, ∼20× times larger than the best demonstrated SrTiO{sub 3} MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO{sub 3} in increasing the pinch off voltage of the MESFET.

• OSTI ID: 22303538
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
CURRENTS
DIFFUSION BARRIERS
ELECTRON DENSITY
ELECTRONS
FIELD EFFECT TRANSISTORS
LAYERS
METALS
MODULATION
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
PERMITTIVITY
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
STRONTIUM TITANATES
THIN FILMS