High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Journal Article · Mon Jun 09 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4882415· OSTI ID:22300018

Rousseau, M.; Gerbedoen, J. -C.; Bourzgui, N. ^[1]; Mattalah, M. ^[2]; Bonanno, P. L.; Ougazzaden, A. ^[3]; Telia, A. ^[4]; Patriarche, G. ^[5]; BenMoussa, A. ^[6]

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1. Institut d'Electronique de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, USTL, Avenue Poincaré, 59652 Villeneuve d'Ascq (France)
2. Laboratoire de Microélectronique, Université Djilali Liabès, 22000 Sidi Bel Abbès (Algeria)
3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30324-0250 (United States)
4. LMI, Electronic Department, Faculty of Engineering, Mentouri University of Constantine, Constantine (Algeria)
5. Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, 91460 Marcoussis (France)
6. Solar Terrestrial Center of Excellence, Royal Observatory of Belgium, Circular 3, B-1180 Brussels (Belgium)

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at V{sub GS} = −40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to −100 V, which is interesting for high-performance transistors dedicated to power applications.

• OSTI ID: 22300018
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
DEPLETION LAYER
DIFFUSION BARRIERS
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
LEAKAGE CURRENT
PHOSPHORUS ADDITIONS
PIEZOELECTRICITY
POLARIZATION
SIMULATION
SPUTTERING
STRAINS
STRESSES
SURFACES
TITANIUM
TITANIUM NITRIDES