Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

Journal Article · Wed Oct 15 00:00:00 EDT 2014 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.05.001· OSTI ID:22420589

Koo, Sang-Mo; Kang, Min-Seok

Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

• OSTI ID: 22420589
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 58; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
REDUCTION
SEMICONDUCTOR MATERIALS
TITANIUM
TRANSISTORS