Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Klein, Brianna Alexandra; Allerman, Andrew A.; Armstrong, Andrew

doi:10.1063/5.0185336

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Journal Article · Sun Mar 03 23:00:00 EST 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0185336· OSTI ID:2320341

^[1]; Allerman, Andrew A. ^[1]; ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al_0.86Ga_0.14N barrier/Al_0.7Ga_0.3N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10⁶) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: NA0003525

OSTI ID:: 2320341

Report Number(s):: SAND--2024-02666J

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 124; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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