Using silicon-vacancy centers in diamond to probe the full strain tensor

Bates, Kelsey M.; Day, Matthew W.; Smallwood, Christopher L.; Owen, Rachel C.; Schröder, Tim; Bielejec, Edward; Ulbricht, Ronald; Cundiff, Steven T.

doi:10.1063/5.0052613

Using silicon-vacancy centers in diamond to probe the full strain tensor

Journal Article · Fri Jul 09 00:00:00 EDT 2021 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0052613· OSTI ID:1806582

; ; ; ; ; ; Ulbricht, Ronald;

An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: NA0003525

OSTI ID:: 1806582

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 130; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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