Strain engineering of the silicon-vacancy center in diamond

Meesala, Srujan; Sohn, Young-Ik; Pingault, Benjamin; Shao, Linbo; Atikian, Haig A.; Holzgrafe, Jeffrey; Gündoğan, Mustafa; Stavrakas, Camille; Sipahigil, Alp; Chia, Cleaven; Evans, Ruffin; Burek, Michael J.; Zhang, Mian; Wu, Lue; Pacheco, Jose L.; Abraham, John; Bielejec, Edward; Lukin, Mikhail D.; Atatüre, Mete; Lončar, Marko

doi:10.1103/PhysRevB.97.205444

Strain engineering of the silicon-vacancy center in diamond

Journal Article · Tue May 29 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.97.205444· OSTI ID:1464186

Meesala, Srujan ^[1]; Sohn, Young-Ik ^[1]; Pingault, Benjamin ^[2]; Shao, Linbo ^[1]; Atikian, Haig A. ^[1]; Holzgrafe, Jeffrey ^[1]; Gündoğan, Mustafa ^[2]; Stavrakas, Camille ^[2]; Sipahigil, Alp ^[3]; Chia, Cleaven ^[1]; Evans, Ruffin ^[4]; Burek, Michael J. ^[1]; Zhang, Mian ^[1]; Wu, Lue ^[1]; Pacheco, Jose L. ^[5]; Abraham, John ^[5]; Bielejec, Edward ^[5]; Lukin, Mikhail D. ^[4]; Atatüre, Mete ^[2]; Lončar, Marko ^[1]

Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences
Univ. of Cambridge (United Kingdom). Cavendish Lab.
Harvard Univ., Cambridge, MA (United States). Dept. of Physics; California Inst. of Technology (CalTech), Pasadena, CA (United States). Inst. for Quantum Information and Matter and Thomas J. Watson, Sr., Lab. of Applied Physics
Harvard Univ., Cambridge, MA (United States). Dept. of Physics
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. Here, we identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1464186

Alternate ID(s):: OSTI ID: 1439377

Report Number(s):: SAND--2018-0438J; 659973

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 97; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Diamond optomechanical crystals with embedded nitrogen-vacancy centers Cady, Jeffrey V.; Michel, Ohad; Lee, Kenneth W. arXiv https://doi.org/10.48550/arxiv.1811.04275	preprint	January 2018
Inverse-Designed Diamond Photonics Dory, Constantin; Vercruysse, Dries; Yang, Ki Youl arXiv https://doi.org/10.48550/arxiv.1812.02287	text	January 2018
Quantum interference of electromechanically stabilized emitters in nanophotonic devices Machielse, Bartholomeus; Bogdanovic, Stefan; Meesala, Srujan arXiv https://doi.org/10.48550/arxiv.1901.09103	text	January 2019
Quantum Nanophotonics with Group IV defects in Diamond Bradac, Carlo; Gao, Weibo; Forneris, Jacopo arXiv https://doi.org/10.48550/arxiv.1906.10992	text	January 2019
An integrated nanophotonic quantum register based on silicon-vacancy spins in diamond Nguyen, C. T.; Sukachev, D. D.; Bhaskar, M. K. arXiv https://doi.org/10.48550/arxiv.1907.13200	text	January 2019
Simulation of topological phases with color center arrays in phononic crystals Li, Xiao-Xiao; Li, Bo; Li, Peng-Bo arXiv https://doi.org/10.48550/arxiv.2001.01397	text	January 2020