Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control

Zhang, Zi-Huai; Zuber, Josh A.; Rodgers, Lila V. H.; Gui, Xin; Stevenson, Paul; Li, Minghao; Batzer, Marietta; Grimau Puigibert, Marcel li; Shields, Brendan J.; Edmonds, Andrew M.; Palmer, Nicola; Markham, Matthew L.; Cava, Robert J.; Maletinsky, Patrick; de Leon, Nathalie P.

doi:10.1103/physrevlett.130.166902

Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control

Journal Article · Fri Apr 21 04:00:00 EDT 2023 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.130.166902· OSTI ID:2425545

^[1]; ^[2]; ^[1]; Gui, Xin ^[1]; Stevenson, Paul ^[3]; ^[2]; Batzer, Marietta ^[2]; Grimau Puigibert, Marcel li ^[2]; ^[2]; Edmonds, Andrew M. ^[4]; ^[4]; ^[4]; Cava, Robert J. ^[1]; ^[2]; ^[1]

Princeton University, NJ (United States)
University of Basel (Switzerland); Swiss Nanoscience Institute, Basel (Switzerland)
Northeastern University, Boston, MA (United States)
Element Six (United Kingdom)

Neutral silicon vacancy centers (SiV⁰) in diamond are promising candidates for quantum applications; however, stabilizing SiV⁰ requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV⁰ centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV⁰ centers, as well as charge state engineering of other defects.

View Accepted Manuscript (DOE)

Research Organization:: National Quantum Information Science (QIS) Research Centers (United States). Co-design Center for Quantum Advantage (C2QA); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF); Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: SC0012704

OSTI ID:: 2425545

Alternate ID(s):: OSTI ID: 1971177

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 16 Vol. 130; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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