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Title: Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Journal Article · · Advanced Science
 [1];  [1];  [2];  [3];  [4]; ORCiD logo [5]
  1. Department of Physics CUNY‐City College of New York New York NY 10031 USA
  2. Department of Quantum Science and Technology Research School of Physics Australian National University Canberra ACT 2601 Australia
  3. Department of Physics CUNY‐City College of New York New York NY 10031 USA, CUNY‐Graduate Center New York NY 10016 USA, Center for Computational Quantum Physics Flatiron Institute New York NY 10010 USA
  4. School of Physics The University of Melbourne Parkville VIC 3010 Australia
  5. Department of Physics CUNY‐City College of New York New York NY 10031 USA, CUNY‐Graduate Center New York NY 10016 USA

Abstract The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, multi‐color confocal microscopy and density functional theory are used to examine photo‐induced SiV recombination — from neutral, to single‐, to double‐negatively charged — over a broad spectral window in chemical‐vapor‐deposition (CVD) diamond under ambient conditions. For the SiV 0 to SiV transition, a linear growth of the photo‐recombination rate with laser power at all observed wavelengths is found, a hallmark of single photon dynamics. Laser excitation of SiV , on the other hand, yields only fractional recombination into SiV 2‒ , a finding that is interpreted in terms of a photo‐activated electron tunneling process from proximal nitrogen atoms.

Sponsoring Organization:
USDOE
OSTI ID:
2323595
Journal Information:
Advanced Science, Journal Name: Advanced Science; ISSN 2198-3844
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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