Doped gate dielectric materials
Patent
·
OSTI ID:1805435
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
- Research Organization:
- HRL Labs., LLC, Malibu, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR000450
- Assignee:
- HRL Laboratories, LLC (Malibu, CA)
- Patent Number(s):
- 10,903,333
- Application Number:
- 15/663,584
- OSTI ID:
- 1805435
- Resource Relation:
- Patent File Date: 07/28/2017
- Country of Publication:
- United States
- Language:
- English
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