skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Doped gate dielectrics materials

Patent ·
OSTI ID:1925076

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Research Organization:
HRL Laboratories, LLC, Malibu, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000450
Assignee:
HRL Laboratories, LLC (Malibu, CA)
Patent Number(s):
11,437,485
Application Number:
17/131,518
OSTI ID:
1925076
Resource Relation:
Patent File Date: 12/22/2020
Country of Publication:
United States
Language:
English

References (24)

Germanium-Based Quantum Well Devices patent-application March 2016
Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor patent-application November 2010
Semiconductor device and inverter circuit patent-application September 2016
Semiconductor Device and Method of Manufacturing the Same patent-application September 2016
Manufacturing method of semiconductor device patent-application December 2017
Thermal Annealing Effects on P-Type Mg-Doped GaN Films journal February 1992
III-nitride metal insulator semiconductor field effect transistor patent October 2014
600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor journal November 2016
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type Gallium Nitride as a current blocking layer patent-application December 2012
Semiconductor Device, Inverter Circuit, and Vehicle patent-application September 2016
Doped gate dielectric materials patent January 2021
Methods and Apparatus for Measuring Analytes Using Large Scale FET Arrays patent-application June 2016
Transistor with diamond gate patent-application March 2015
Manufacturing method of semiconductor device patent-application November 2009
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type Gallium Nitride as a current blocking layer patent-application May 2015
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment journal July 2005
Back Diffusion Suppression Structures patent-application October 2010
Method for Manufacturing Nitride Semiconductor Element patent-application November 2013
Field Effect Transistor and Method of Manufacturing the Same patent-application January 2011
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance journal May 2011
An Optical Absorption Property of Highly Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy journal May 1992
Metal Oxide Semiconductor Thin Film Transistors patent-application January 2012
Method and system for heating semiconductor wafers patent November 2000
III-Nitride Metal Insulator Semiconductor Field effect Transistor patent-application January 2013