Electron-electron interactions and weak antilocalization in few-layer ZrTe5 devices

Xie, Zhijian; Wei, Xinjian; Cao, Shimin; Zhang, Yu; Yan, Shili; Gu, G. D.; Li, Qiang; Chen, Jian-Hao

doi:10.1103/physrevb.103.155408

Electron-electron interactions and weak antilocalization in few-layer ZrTe₅ devices

Journal Article · Fri Apr 09 00:00:00 EDT 2021 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.103.155408· OSTI ID:1787820

^[1]; Wei, Xinjian ^[2]; ^[2]; ^[3]; Yan, Shili ^[3]; Gu, G. D. ^[4]; ^[5]; ^[2]

Peking Univ., Beijing (China)
Peking Univ., Beijing (China); Beijing Academy of Quantum Information Sciences (China)
Beijing Academy of Quantum Information Sciences (China)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)

Recently, a lot of efforts have been devoted to the transport properties of relatively thick ZrTe₅ crystals, focusing on their three-dimensional topological effects. ZrTe₅ in its 2D limit, on the other hand, was much less explored experimentally. Here we present detailed magnetotransport studies of few-layer ZrTe₅ devices, in which the coexistence of strong electron-electron interaction and weak anti-localization is observed. The coexistence of the two effects manifests itself in the temperature and magnetic field dependence of the resistance as well as in the universal conductance fluctuations of the few-layer devices. Both effects also show strong two dimensional characteristics. Finally, our results provide new insight into the highly intricate properties of topological material ZrTe₅.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: Beijing Municipal Natural Science Foundation; National Basic Research Program of China; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0012704

OSTI ID:: 1787820

Report Number(s):: BNL--221602-2021-JAAM

Journal Information:: Physical Review. B, Journal Name: Physical Review. B Journal Issue: 15 Vol. 103; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Electron-electron interactions and weak antilocalization in few-layer ZrTe5 devices

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Electron-electron interactions and weak antilocalization in few-layer ZrTe₅ devices