Gate-Tunable Multiband Transport in ZrTe5 Thin Devices

Liu, Yonghe; Pi, Hanqi; Watanabe, Kenji; Taniguchi, Takashi; Gu, Genda; Li, Qiang; Weng, Hongming; Wu, Quansheng; Li, Yongqing; Xu, Yang

doi:10.1021/acs.nanolett.3c01528

Gate-Tunable Multiband Transport in ZrTe₅ Thin Devices

Journal Article · Fri May 19 00:00:00 EDT 2023 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.3c01528· OSTI ID:1992856

Liu, Yonghe ^[1]; Pi, Hanqi ^[1]; ^[2]; ^[2]; Gu, Genda ^[3]; ^[4]; ^[1]; Wu, Quansheng ^[1]; ^[1]; ^[1]

Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)
National Institute for Materials Science (Japan)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Brookhaven National Laboratory (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States)

Interest in ZrTe₅ has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe₅ thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron–hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Finally, our work helps to resolve the longstanding puzzles on ZrTe₅ and could potentially pave the way for realizing novel topological states in the two-dimensional limit.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: Chinese Academy of Sciences (CAS); National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1992856

Report Number(s):: BNL-224630-2023-JAAM

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 11 Vol. 23; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Gate-Tunable Multiband Transport in ZrTe5 Thin Devices

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Gate-Tunable Multiband Transport in ZrTe₅ Thin Devices