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Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4];  [4];  [2];  [2];  [3];  [3];  [5];  [3];  [6]
  1. Peking Univ., Beijing (China). International Center for Quantum Materials; Peking Univ., Beijing (China). Key Laboratory for the Physics and Chemistry of Nanodevices
  2. Peking Univ., Beijing (China). International Center for Quantum Materials; Beijing Academy of Quantum Information Sciences (China)
  3. Southern Univ. of Science and Technology, Shenzhen (China). Shenzhen Institute for Quantum Science and Engineering
  4. Beijing Academy of Quantum Information Sciences (China)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States)
  6. Peking Univ., Beijing (China). International Center for Quantum Materials, School of Physics; Peking University, Beijing (China). Key Laboratory for the Physics and Chemistry of Nanodevices; Beijing Academy of Quantum Information Sciences (China); Peking Univ., Beijing (China). Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials
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ZrTe5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 160K with increasing thickness of the ZrTe5 thin flakes from 42nm to 89nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at T*. Overall, our findings provide a multi-parameter indicator for the emergence of topological phase transition in ZrTe5 and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also shed light on the role of anomalous Hall Effect in the transport properties of ZrTe5.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0012704
OSTI ID:
1830360
Report Number(s):
BNL--222407-2021-JAAM
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 12 Vol. 104; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Anomalous Hall effect
Berry curvature
Magneto-resistance
Topological phase transition