Perpendicular in-plane negative magnetoresistance in ZrTe5

Ma, Ning; Qiang, Xiao-Bin; Xie, Zhijian; Zhang, Yu; Yan, Shili; Cao, Shimin; Wang, Peipei; Zhang, Liyuan; Gu, G. D.; Li, Qiang; Xie, X. C.; Lu, Hai-Zhou; Wei, Xinjian; Chen, Jian-Hao

doi:10.1016/j.scib.2023.06.018

Perpendicular in-plane negative magnetoresistance in ZrTe₅

Journal Article · Wed Jun 21 00:00:00 EDT 2023 · Science Bulletin

DOI:https://doi.org/10.1016/j.scib.2023.06.018· OSTI ID:2204620

Ma, Ning ^[1]; Qiang, Xiao-Bin ^[2]; Xie, Zhijian ^[1]; Zhang, Yu ^[3]; Yan, Shili ^[3]; Cao, Shimin ^[4]; Wang, Peipei ^[2]; Zhang, Liyuan ^[2]; Gu, G. D. ^[5]; Li, Qiang ^[6]; Xie, X. C. ^[7]; Lu, Hai-Zhou ^[2]; Wei, Xinjian ^[4]; Chen, Jian-Hao ^[4]

Peking University, Beijing (China)
Southern University of Science and Technology, Shenzhen (China)
Beijing Academy of Quantum Information Sciences (China)
Peking University, Beijing (China); Beijing Academy of Quantum Information Sciences (China)
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States); Stony Brook, University, NY (United States)
Peking University, Beijing (China); Fudan University, Shanghai (China); Hefei National Laboratory (China)

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe₅ when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. In conclusion, our results provide new insights into the understanding of in-plane NMR in topological materials.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: Beijing Municipal Natural Science Foundation; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: SC0012704

OSTI ID:: 2204620

Report Number(s):: BNL--224963-2023-JAAM

Journal Information:: Science Bulletin, Journal Name: Science Bulletin Journal Issue: 14 Vol. 68; ISSN 2095-9273

Publisher:: Elsevier; Science China PressCopyright Statement

Country of Publication:: United States

Language:: English

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75 CONDENSED MATTER PHYSICS
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ZeTe5

Perpendicular in-plane negative magnetoresistance in ZrTe5

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References (17)

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Perpendicular in-plane negative magnetoresistance in ZrTe₅