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Unraveling the Topological Phase of ZrTe5 via Magnetoinfrared Spectroscopy

Journal Article · · Physical Review Letters
 [1];  [2];  [3];  [3];  [4];  [5];  [3];  [4];  [6];  [7];  [7];  [3]
  1. National High Magnetic Field Laboratory, Tallahassee, FL (United States); School of Physics, Georgia Institute of Technology
  2. Georgia Inst. of Technology, Atlanta, GA (United States); Peking University, Beijing (China)
  3. Georgia Inst. of Technology, Atlanta, GA (United States)
  4. Univ. of Tennessee, Knoxville, TN (United States)
  5. Peking University, Beijing (China)
  6. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  7. National High Magnetic Field Laboratory, Tallahassee, FL (United States)

For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the anisotropic transition-metal pentatelluride ZrTe5 as an example, we show that the band inversion manifests itself as a second extremum (band gap) in the layer stacking direction, which can be probed experimentally via magnetoinfrared spectroscopy. Specifically, we find that the band anisotropy of ZrTe5 features a slow dispersion in the layer stacking direction, along with an additional set of optical transitions from a band gap next to the Brillouin zone center. Furthermore, our work identifies ZrTe5 as a strong TI at liquid helium temperature and provides a new perspective in determining band inversion in layered topological materials.

Research Organization:
Georgia Inst. of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
Grant/Contract Number:
FG02-07ER46451; SC0018660; SC0020254; NA0003525
OSTI ID:
1642423
Alternate ID(s):
OSTI ID: 1658381
OSTI ID: 1670196
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 4 Vol. 125; ISSN 1079-7114; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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