Ag–Cu–In–Ga Metal Precursor Thin Films for (Ag,Cu)(In,Ga)Se2 Solar Cells
Journal Article
·
· IEEE Journal of Photovoltaics
- Univ. of Delaware, Newark, DE (United States); University of Delaware
- Univ. of Delaware, Newark, DE (United States)
The Ag-Cu-In-Ga (ACIG) material system has been investigated over a composition range used for reaction to form (Ag,Cu)(In,Ga)Se 2 thin films for photovoltaic application. ACIG thin films were sputter deposited from Ag 0.77 Ga 0.23 , Cu 0.77 Ga 0.23 , and In targets using different layer sequences with Ag/(Cu + Ag) and (Ag + Cu)/(Ga + In) ratios fixed at 0.25 and 0.90, respectively. The most uniform morphology was achieved with a Ag-Ga layer followed by a layer with co-sputtered Cu-Ga and In. Varying the sputtering sequence for stacked layers resulted in dissimilar morphologies and structural phases. X-ray diffraction analyses revealed that Ag-Ga and In layers intermix to form the (Ag,Cu)In 2 phase in all Ag-containing samples except one with a Ag-Ga/Cu-Ga/In sequence. In addition, precursors were shown to be unstable during storage at room temperature, where a secondary (Ag,Cu * )In 2 phase with higher Cu content formed. Lastly, phase composition of the precursors annealed at 300°C was characterized.
- Research Organization:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0007542
- OSTI ID:
- 1780895
- Alternate ID(s):
- OSTI ID: 1536605
- Journal Information:
- IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 1 Vol. 7; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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