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A quaternary Laves-type phase in Ag-Cu-In-Ga thin films

Journal Article · · Journal of Alloys and Compounds
 [1];  [2];  [2]
  1. Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion; University of Delaware
  2. Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion
Formation of a new quaternary Laves-type phase in sputter-deposited and evaporated thin films of Ag-Cu-In-Ga (ACIG) is reported. Films with different compositions are analyzed by energy dispersive x-ray spectroscopy and x-ray diffraction to determine composition and structure based on Rietveld whole pattern refinement. Annealing and partial reaction with H2Se are used to study the phase. The quaternary phase corresponds to (Cu1-xGax)2(AgyIn1-y) with x ≈ 0.2 and ≈ 0.3. It has a Cu2Mg-type crystal structure with space group of Fd$$\bar{3}$$m and lattice parameter of 7.090. Finally, formation of this phase is reported in the composition range (Ag + Cu)/(In + Ga) ≈ 0.8–0.9 suitable for precursors to the formation of chalcopyrite thin films for photovoltaic application.
Research Organization:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0005407; EE0007542
OSTI ID:
1780900
Alternate ID(s):
OSTI ID: 1550579
Journal Information:
Journal of Alloys and Compounds, Journal Name: Journal of Alloys and Compounds Vol. 710; ISSN 0925-8388
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (18)

A New Compound in the Cu-In System - the Synthesis and Structure of Cu 10 In 7 journal November 2008
Effect of MWCNTs on hydrogen storage properties of a Zr-based Laves phase alloy journal February 2016
Structure and stability of Laves phases. Part I. Critical assessment of factors controlling Laves phase stability journal July 2004
Phase stability of Cu2Mg and CuMg2 compounds against noncrystallizations analyzed with a plastic crystal model journal November 2008
Effect of Rapid Thermal Processing on the structural and device properties of (Ag,Cu)(In,Ga)Se2 thin film solar cells journal May 2013
High-Pressure Synthesis and Superconductivity of the Laves Phase Compound Ca(Al,Si) 2 Composed of Truncated Tetrahedral Cages Ca@(Al,Si) 12 journal April 2013
Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 Electrons journal August 1967
Atomic Radii in Crystals journal November 1964
Structural and optical properties of (Ag,Cu)(In,Ga)Se 2 polycrystalline thin film alloys journal June 2014
VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data journal October 2011
Quantitative texture analysis by Rietveld refinement journal August 1997
Complex alloy structures regarded as sphere packings. I. Definitions and basic principles journal March 1958
Complex alloy structures regarded as sphere packings. II. Analysis and classification of representative structures journal July 1959
An Investigation of the Surface Properties of (Ag,Cu)(In,Ga)Se $_{\bf 2}$ Thin Films journal October 2012
Characterization of (AgCu)(InGa)Se$_{\bf 2}$ Absorber Layer Fabricated by a Selenization Process from Metal Precursor journal January 2013
The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation journal January 2014
Ag–Cu–In–Ga Metal Precursor Thin Films for (Ag,Cu)(In,Ga)Se2 Solar Cells journal January 2017
Characterization of Terfenol-D for magnetostrictive transducers journal March 1991


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