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Optical Characterization of Defects in High-efficiency (Ag,Cu)(In,Ga)Se2

Conference · · 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
 [1]; ; ; ;
  1. The Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 USA

We applied time-resolved photoluminescence (TRPL) spectroscopy to study optimized chalcopyrite (Ag,Cu)(In,Ga)Se 2 thin films. The device shows power conversion efficiency of 18.7%. The metastable defect V Se -V Cu within ACIGS at Ev+0.98 eV is detected in sub-bandgap TRPL excitation spectra. TRPL lifetime of 50 ns is limited by the density of mid-gap defects such as Cu Ga or Cu In . The similarity of TRPL dynamics before and after light soaking indicates the optimized ACIGS thin film is less metastable because the density of V Cu -V Se defect is reduced to below 10 15 cm -3 . This study indicates that ACIGS has improved cell efficiency and reliability characteristics.

Research Organization:
The Ohio State University, National Renewable Energy Laboratory, Colorado School of Mines
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
EE0008755
OSTI ID:
1808843
Journal Information:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), Journal Name: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
Country of Publication:
United States
Language:
English

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