Optical Characterization of Defects in High-Efficiency (Ag,Cu)(In,Ga)Se2
We applied time-resolved photoluminescence (TRPL) spectroscopy to study optimized chalcopyrite (Ag,Cu)(In,Ga)Se2 thin films. The device shows power conversion efficiency of 18.7%. The metastable defect VSe-VCu within ACIGS at EV+0.98 eV is detected in sub-bandgap TRPL excitation spectra. TRPL lifetime of 50 ns is limited by the density of mid-gap defects such as CuGa or CuIn. The similarity of TRPL dynamics before and after light soaking indicates the optimized ACIGS thin film is less metastable because the density of VCu-VSe defect is reduced to below 10^15 cm^-3. This study indicates that ACIGS has improved cell efficiency and reliability characteristics.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1765617
- Report Number(s):
- NREL/CP-5900-77038; MainId:25001; UUID:0fef9e78-16a7-4636-8777-70970c5f7748; MainAdminID:19635
- Country of Publication:
- United States
- Language:
- English
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