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Phase stability in Ag-Cu-In-Ga metal precursors for (Ag,Cu)(In,Ga)Se2 thin films

Journal Article · · Solar Energy Materials and Solar Cells
 [1];  [2];  [2];  [2]
  1. Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion; University of Delaware
  2. Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion
The addition of Ag to Cu-Ga-In precursors for reaction to form (AgCu)(InGa)Se2 has shown benefits including improved adhesion, greater process tolerance and potential for improved device performance. In this study, metal precursors were sputtered with a Cu-Ga/In/Ag-Ga sequence with Ag/(Cu+Ag) = 0.25 and (Ag+Cu)/(Ga+In) = 0.90. These precursor layers are shown to be unstable, with a phase evolution during storage at room temperature revealed by x-ray diffraction (XRD). This behavior was studied in samples annealed in the temperature range of 60–150 °C or stored for up to 90 days. XRD analyses indicated the formation of (Ag1-xCux)In2 with Cu content of 28% and 36% for samples annealed at 100 °C and 150 °C, respectively. Energy dispersive x-ray spectroscopy and XRD analyses on selenized samples showed a uniform distribution of Ag and Cu through the films and a Ga accumulation near the back interface. Solar cells fabricated from the selenized films showed improved device performance in VOC and FF as a result of the precursor anneal.
Research Organization:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0005407; EE0007542
OSTI ID:
1780903
Alternate ID(s):
OSTI ID: 1549832
Journal Information:
Solar Energy Materials and Solar Cells, Journal Name: Solar Energy Materials and Solar Cells Vol. 172; ISSN 0927-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (23)

Thin-film solar cells: device measurements and analysis journal March 2004
Studies of compound formation at CuIn, AgIn and AuIn interfaces with perturbed γ-γ angular correlations journal October 1986
Subsolidus phase relations of the Cu–Ga–N system journal July 2007
Experimental study of the ternary Ag–Cu–In phase diagram journal May 2009
Real-time studies of phase transformations in Cu–In–Se–S thin films journal March 2006
Technological aspects of flexible CIGS solar cells and modules journal December 2004
Secondary phase formation in (Ag,Cu)(In,Ga)Se2 thin films grown by three-stage co-evaporation journal July 2017
Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In,Ga)Se[sub 2] thin films on GaAs journal January 2006
Incongruent reaction of Cu–(InGa) intermetallic precursors in H2Se and H2S journal October 2007
Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap journal May 1996
Coevaporated Cu–In films as precursors for solar cells journal October 1999
Three-step H 2 Se/Ar/H 2 S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In,Ga)(Se,S) 2 thin films journal April 2012
Structural and optical properties of (Ag,Cu)(In,Ga)Se 2 polycrystalline thin film alloys journal June 2014
Direct evidence of void passivation in Cu(InGa)(SSe) 2 absorber layers journal February 2015
Correction of intensities for preferred orientation in powder diffractometry: application of the March model journal August 1986
Characterization of (AgCu)(InGa)Se$_{\bf 2}$ Absorber Layer Fabricated by a Selenization Process from Metal Precursor journal January 2013
The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation journal January 2014
Ag–Cu–In–Ga Metal Precursor Thin Films for (Ag,Cu)(In,Ga)Se2 Solar Cells journal January 2017
Device characterization of (AgCu)(InGa)Se2 solar cells conference June 2010
Effect of sputtering sequence on the properties of Ag-Cu-In-Ga metal precursors and reacted (Ag,Cu)(In,Ga)Se2 films
  • Soltanmohammad, Sina; Berg, Dominik M.; Chen, Lei
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2014.6925250
conference June 2014
Reaction pathway analysis of Ag-alloyed Cu(In, Ga)Se2 absorber materials conference June 2016
Characteristics of Cu(In,Ga)Se 2 Films Prepared by Atmospheric Pressure Selenization of Cu-In-Ga Precursors Using Ditert-Butylselenide as Se Source journal January 2012
Incorporation of Sb, Bi, and Te Interlayers at the Mo/Cu-In-Ga Interface for the Reaction of Cu(In,Ga)(Se,S) 2 journal January 2013

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