Phase stability in Ag-Cu-In-Ga metal precursors for (Ag,Cu)(In,Ga)Se2 thin films

Soltanmohammad, Sina; Chen, Lei; McCandless, Brian E.; Shafarman, William N.

doi:10.1016/j.solmat.2017.08.009

Title: Phase stability in Ag-Cu-In-Ga metal precursors for (Ag,Cu)(In,Ga)Se₂ thin films

Journal Article · Fri Dec 01 00:00:00 EST 2017 · Solar Energy Materials and Solar Cells

DOI:https://doi.org/10.1016/j.solmat.2017.08.009· OSTI ID:1780903

Soltanmohammad, Sina ^[1]; Chen, Lei ^[1]; McCandless, Brian E. ^[1];

^[1]

Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

The addition of Ag to Cu-Ga-In precursors for reaction to form (AgCu)(InGa)Se₂ has shown benefits including improved adhesion, greater process tolerance and potential for improved device performance. In this study, metal precursors were sputtered with a Cu-Ga/In/Ag-Ga sequence with Ag/(Cu+Ag) = 0.25 and (Ag+Cu)/(Ga+In) = 0.90. These precursor layers are shown to be unstable, with a phase evolution during storage at room temperature revealed by x-ray diffraction (XRD). This behavior was studied in samples annealed in the temperature range of 60–150 °C or stored for up to 90 days. XRD analyses indicated the formation of (Ag_1-xCu_x)In₂ with Cu content of 28% and 36% for samples annealed at 100 °C and 150 °C, respectively. Energy dispersive x-ray spectroscopy and XRD analyses on selenized samples showed a uniform distribution of Ag and Cu through the films and a Ga accumulation near the back interface. Solar cells fabricated from the selenized films showed improved device performance in V_OC and FF as a result of the precursor anneal.

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Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0007542; EE0005407

OSTI ID:: 1780903

Alternate ID(s):: OSTI ID: 1549832

Journal Information:: Solar Energy Materials and Solar Cells, Vol. 172; ISSN 0927-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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References (23)

Characterization of (AgCu)(InGa)Se$_{\bf 2}$ Absorber Layer Fabricated by a Selenization Process from Metal Precursor Tauchi, Yuki; Kim, Kihwan; Park, Hyeonwook IEEE Journal of Photovoltaics, Vol. 3, Issue 1 https://doi.org/10.1109/JPHOTOV.2012.2221083	journal	January 2013
Subsolidus phase relations of the Cu–Ga–N system Zhang, Y.; Li, J. -B.; Liang, J. K. Journal of Alloys and Compounds, Vol. 438, Issue 1-2 https://doi.org/10.1016/j.jallcom.2006.08.015	journal	July 2007
Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In,Ga)Se[sub 2] thin films on GaAs Lei, C. H.; Rockett, A. A.; Robertson, I. M. Journal of Applied Physics, Vol. 100, Issue 11 https://doi.org/10.1063/1.2397282	journal	January 2006
Coevaporated Cu–In films as precursors for solar cells Gossla, M.; Metzner, H.; Mahnke, H. -E. Journal of Applied Physics, Vol. 86, Issue 7 https://doi.org/10.1063/1.371270	journal	October 1999
Device characterization of (AgCu)(InGa)Se2 solar cells Shafarman, William; Thompson, Christopher; Boyle, Jonathan 2010 35th IEEE Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC.2010.5615949	conference	June 2010
Secondary phase formation in (Ag,Cu)(In,Ga)Se2 thin films grown by three-stage co-evaporation Chen, Lei; Soltanmohammad, Sina; Lee, JinWoo Solar Energy Materials and Solar Cells, Vol. 166 https://doi.org/10.1016/j.solmat.2017.03.001	journal	July 2017
Incorporation of Sb, Bi, and Te Interlayers at the Mo/Cu-In-Ga Interface for the Reaction of Cu(In,Ga)(Se,S) ₂ Kim, Kihwan; Han, Jaesung; Shafarman, William N. MRS Proceedings, Vol. 1538 https://doi.org/10.1557/opl.2013.999	journal	January 2013
Characteristics of Cu(In,Ga)Se ₂ Films Prepared by Atmospheric Pressure Selenization of Cu-In-Ga Precursors Using Ditert-Butylselenide as Se Source Hsiao, Sheng-Yu; Yang, Pei-Ching; Ni, Ho-Ching Journal of The Electrochemical Society, Vol. 159, Issue 4 https://doi.org/10.1149/2.021204jes	journal	January 2012
Technological aspects of flexible CIGS solar cells and modules Kessler, Friedrich; Rudmann, Dominik Solar Energy, Vol. 77, Issue 6, p. 685-695 https://doi.org/10.1016/j.solener.2004.04.010	journal	December 2004
Correction of intensities for preferred orientation in powder diffractometry: application of the March model Dollase, W. A. Journal of Applied Crystallography, Vol. 19, Issue 4 https://doi.org/10.1107/S0021889886089458	journal	August 1986
Three-step H ₂ Se/Ar/H ₂ S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In,Ga)(Se,S) ₂ thin films Kim, Kihwan; Hanket, Gregory M.; Huynh, Trang Journal of Applied Physics, Vol. 111, Issue 8 https://doi.org/10.1063/1.4704390	journal	April 2012
The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation Chen, Lei; Lee, JinWoo; Shafarman, William N. IEEE Journal of Photovoltaics, Vol. 4, Issue 1 https://doi.org/10.1109/JPHOTOV.2013.2280471	journal	January 2014
Effect of sputtering sequence on the properties of Ag-Cu-In-Ga metal precursors and reacted (Ag,Cu)(In,Ga)Se2 films Soltanmohammad, Sina; Berg, Dominik M.; Chen, Lei 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2014.6925250	conference	June 2014
Reaction pathway analysis of Ag-alloyed Cu(In, Ga)Se2 absorber materials Soltanmohammad, Sina; Shafarman, William N. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC.2016.7750040	conference	June 2016
Direct evidence of void passivation in Cu(InGa)(SSe) ₂ absorber layers Lee, Dongho; Lee, Jaehan; Heo, Sung Applied Physics Letters, Vol. 106, Issue 8 https://doi.org/10.1063/1.4913612	journal	February 2015
Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap Shafarman, William N.; Klenk, Reiner; McCandless, Brian E. Journal of Applied Physics, Vol. 79, Issue 9 https://doi.org/10.1063/1.361431	journal	May 1996
Structural and optical properties of (Ag,Cu)(In,Ga)Se ₂ polycrystalline thin film alloys Boyle, J. H.; McCandless, B. E.; Shafarman, W. N. Journal of Applied Physics, Vol. 115, Issue 22 https://doi.org/10.1063/1.4880243	journal	June 2014
Real-time studies of phase transformations in Cu–In–Se–S thin films von Klopmann, Ch.; Djordjevic, J.; Scheer, R. Journal of Crystal Growth, Vol. 289, Issue 1 https://doi.org/10.1016/j.jcrysgro.2005.10.105	journal	March 2006
Thin-film solar cells: device measurements and analysis Hegedus, Steven S.; Shafarman, William N. Progress in Photovoltaics: Research and Applications, Vol. 12, Issue 23 https://doi.org/10.1002/pip.518	journal	March 2004
Ag–Cu–In–Ga Metal Precursor Thin Films for (Ag,Cu)(In,Ga)Se2 Solar Cells Soltanmohammad, Sina; Chen, Lei; McCandless, Brian IEEE Journal of Photovoltaics, Vol. 7, Issue 1 https://doi.org/10.1109/JPHOTOV.2016.2615682	journal	January 2017
Incongruent reaction of Cu–(InGa) intermetallic precursors in H2Se and H2S Hanket, G. M.; Shafarman, W. N.; McCandless, B. E. Journal of Applied Physics, Vol. 102, Issue 7 https://doi.org/10.1063/1.2787151	journal	October 2007
Studies of compound formation at CuIn, AgIn and AuIn interfaces with perturbed γ-γ angular correlations Keppner, W.; Wesche, R.; Klas, T. Thin Solid Films, Vol. 143, Issue 2 https://doi.org/10.1016/0040-6090(86)90388-3	journal	October 1986
Experimental study of the ternary Ag–Cu–In phase diagram Bahari, Zahra; Elgadi, Mohamed; Rivet, Jacques Journal of Alloys and Compounds, Vol. 477, Issue 1-2 https://doi.org/10.1016/j.jallcom.2008.10.030	journal	May 2009

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14 SOLAR ENERGY
(Ag
Cu)(In
Ga)Se2
Selenization
precursor stability
(Ag
Cu)In2

Title: Phase stability in Ag-Cu-In-Ga metal precursors for (Ag,Cu)(In,Ga)Se2 thin films

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Title: Phase stability in Ag-Cu-In-Ga metal precursors for (Ag,Cu)(In,Ga)Se₂ thin films