Electrical ferroelectric-like properties of amorphous thin films of ferroelectric oxides prepared by the sol-gel technique
- Univ. of California, Los Angeles, CA (United States)
Lead zirconate titanate [Pb(Zr{sub x}Ti{sub 1-x})O{sub 3}, or PZT], BaTiO{sub 3} and LiNbO{sub 3} thin films on silicon wafer and titanium foil were fabricated by the sol-gel technique. Amorphous LiNbO3 thin film was obtained at 150{degrees}C. Amorphous PZT and BaTiO{sub 3} thin films were obtained at the heat-treatment temperature of 350{degrees}C and 400{degrees}C, respectively. The microstructure of these films was determined by x-ray and electron diffractions and HRTEM technique. The electrical properties of these thin films were measured. For these amorphous thin films ferroelectric hysteresis loop and pyroelectric current were observed. The dielectric permittivity of amorphous thin films is much lower than those of corresponding polycrystalline materials.
- OSTI ID:
- 175519
- Report Number(s):
- CONF-9410372--; CNN: Grant F49620-94-1-0071
- Country of Publication:
- United States
- Language:
- English
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