Sol-gel technology for ferroelectric thin films
Conference
·
OSTI ID:28829
- Research Institute of Industrial Science and Technology, Pohang (Korea, Democratic People`s Republic of)
- Pohang Univ. of Science and Technology (Korea, Democratic People`s Republic of)
Sol-gel-derived ferroelectric thin films can offer particular promise for various microelectronic applications, including FRAM, DRAM elements, thin-film capacitors and pyroelectric IR sensors. In this article, recent progress in the sol-gel processing of two typical ferroelectric thin-film systems is briefly reviewed. These are lead zirconate titanate (PZT) solid solution and Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-based relaxor ferroelectrics. Several examples of the sol chemistry-structures/ferroelectric properties relationships are illustrated using various recent data, including results from the authors` laboratory.
- OSTI ID:
- 28829
- Report Number(s):
- CONF-931142--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical ferroelectric-like properties of amorphous thin films of ferroelectric oxides prepared by the sol-gel technique
Effect of sol-gel precursors on the grain structure of PZT thin films
Piezoelectric properties of sol-gel-derived ferroelectric and antiferroelectric thin layers
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:175519
Effect of sol-gel precursors on the grain structure of PZT thin films
Journal Article
·
Sun Mar 14 23:00:00 EST 1999
· Materials Research Bulletin
·
OSTI ID:679193
Piezoelectric properties of sol-gel-derived ferroelectric and antiferroelectric thin layers
Journal Article
·
Fri Dec 31 23:00:00 EST 1993
· Journal of Applied Physics; (United States)
·
OSTI ID:5359600