Growth and characterization of homoepitaxial β-Ga2O3 layers

Tellekamp, Marshall; Heinselman, Karen; Harvey, Steven; Khan, Imran; Zakutayev, Andriy

doi:10.1088/1361-6463/aba6b8

Growth and characterization of homoepitaxial β-Ga₂O₃ layers

Journal Article · Wed Sep 09 00:00:00 EDT 2020 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/aba6b8· OSTI ID:1660127

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National Renewable Energy Lab. (NREL), Golden, CO (United States)

ß-Ga₂O₃ is a next-generation ultra-wide bandgap semiconductor (E_g= 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial ß-Ga₂O₃ layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of ~1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by J-V and C-V measurements, revealing an unintentional doping density of 4.3×10¹⁶ cm^-3 - 2×10¹⁷ cm^-3 in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the ß-Ga₂O₃ homoepitaxial layers used in power electronic and other devices.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1660127

Alternate ID(s):: OSTI ID: 1664630
OSTI ID: 23015225

Report Number(s):: NREL/JA--5K00-76395; MainId:7161; UUID:ff0c581d-5869-ea11-9c31-ac162d87dfe5; MainAdminID:15157

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 48 Vol. 53; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (36)

Group-III Sesquioxides: Growth, Physical Properties and Devices von Wenckstern, Holger Advanced Electronic Materials, Vol. 3, Issue 9 https://doi.org/10.1002/aelm.201600350	journal	July 2017
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Tsao, J. Y.; Chowdhury, S.; Hollis, M. A. Advanced Electronic Materials, Vol. 4, Issue 1 https://doi.org/10.1002/aelm.201600501	journal	December 2017
Czochralski growth and characterization of β-Ga2O3 single crystals Galazka, Z.; Uecker, R.; Irmscher, K. Crystal Research and Technology, Vol. 45, Issue 12 https://doi.org/10.1002/crat.201000341	journal	August 2010
Brillouin zone and band structure of β-Ga ₂ O ₃ : Brillouin zone and band structure of β-Ga Peelaers, Hartwin; Van de Walle, Chris G. physica status solidi (b), Vol. 252, Issue 4 https://doi.org/10.1002/pssb.201451551	journal	January 2015
MBE grown Ga2O3 and its power device applications Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito Journal of Crystal Growth, Vol. 378 https://doi.org/10.1016/j.jcrysgro.2013.02.015	journal	September 2013
Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito Journal of Crystal Growth, Vol. 392 https://doi.org/10.1016/j.jcrysgro.2014.02.002	journal	April 2014
β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies Afzal, Adeel Journal of Materiomics, Vol. 5, Issue 4 https://doi.org/10.1016/j.jmat.2019.08.003	journal	December 2019
How Much Will Gallium Oxide Power Electronics Cost? Reese, Samantha B.; Remo, Timothy; Green, Johney Joule, Vol. 3, Issue 4 https://doi.org/10.1016/j.joule.2019.01.011	journal	April 2019
Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy Oshima, Takayoshi; Arai, Naoki; Suzuki, Norihito Thin Solid Films, Vol. 516, Issue 17 https://doi.org/10.1016/j.tsf.2007.10.045	journal	July 2008
Inorganic Compounds Stull, Daniel R. Industrial & Engineering Chemistry, Vol. 39, Issue 4 https://doi.org/10.1021/ie50448a023	journal	April 1947
Deep-ultraviolet transparent conductive β-Ga2O3 thin films Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro Applied Physics Letters, Vol. 77, Issue 25 https://doi.org/10.1063/1.1330559	journal	December 2000
Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction LeBeau, James M.; Engel-Herbert, Roman; Jalan, Bharat Applied Physics Letters, Vol. 95, Issue 14 https://doi.org/10.1063/1.3243696	journal	October 2009
The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy Vogt, Patrick; Bierwagen, Oliver Applied Physics Letters, Vol. 106, Issue 8 https://doi.org/10.1063/1.4913447	journal	February 2015
Anisotropic thermal conductivity of β-Ga ₂ O ₃ at elevated temperatures: Effect of Sn and Fe dopants Slomski, M.; Blumenschein, N.; Paskov, P. P. Journal of Applied Physics, Vol. 121, Issue 23 https://doi.org/10.1063/1.4986478	journal	June 2017
Modulation-doped β-(Al _0.2 Ga _0.8 ) ₂ O ₃ /Ga ₂ O ₃ field-effect transistor Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan Applied Physics Letters, Vol. 111, Issue 2 https://doi.org/10.1063/1.4993569	journal	July 2017
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
On the feasibility of p-type Ga ₂ O ₃ Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico Applied Physics Letters, Vol. 112, Issue 3 https://doi.org/10.1063/1.5009423	journal	January 2018
High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa ₂ O ₃ films using monochromatic synchrotron topography Mahadik, Nadeemullah A.; Tadjer, Marko J.; Bonanno, Peter L. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5051633	journal	February 2019
Deep acceptors and their diffusion in Ga ₂ O ₃ Peelaers, Hartwin; Lyons, John L.; Varley, Joel B. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5063807	journal	February 2019
Thermal conductance across β-Ga ₂ O ₃ -diamond van der Waals heterogeneous interfaces Cheng, Zhe; Yates, Luke; Shi, Jingjing APL Materials, Vol. 7, Issue 3 https://doi.org/10.1063/1.5089559	journal	March 2019
State-of-the-art technologies of gallium oxide power devices Higashiwaki, Masataka; Kuramata, Akito; Murakami, Hisashi Journal of Physics D: Applied Physics, Vol. 50, Issue 33 https://doi.org/10.1088/1361-6463/aa7aff	journal	July 2017
Lateral β -Ga ₂ O ₃ field effect transistors Chabak, Kelson D.; Leedy, Kevin D.; Green, Andrew J. Semiconductor Science and Technology, Vol. 35, Issue 1 https://doi.org/10.1088/1361-6641/ab55fe	journal	November 2019
Review of gallium oxide based field-effect transistors and Schottky barrier diodes Liu, Zeng; Li, Pei-Gang; Zhi, Yu-Song Chinese Physics B, Vol. 28, Issue 1 https://doi.org/10.1088/1674-1056/28/1/017105	journal	January 2019
Review of deep ultraviolet photodetector based on gallium oxide Qin, Yuan; Long, Shibing; Dong, Hang Chinese Physics B, Vol. 28, Issue 1 https://doi.org/10.1088/1674-1056/28/1/018501	journal	January 2019
Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects Grigoriev, D.; Lazarev, S.; Schroth, P. Journal of Applied Crystallography, Vol. 49, Issue 3 https://doi.org/10.1107/S1600576716006385	journal	May 2016
X-ray topography of subsurface crystal layers Swiatek, Zbigniew; Fodchuk, Igor; Zaplitnyy, Ruslan Journal of Applied Crystallography, Vol. 50, Issue 3 https://doi.org/10.1107/S1600576717007208	journal	May 2017
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Moser, Neil; McCandless, Jonathan; Crespo, Antonio IEEE Electron Device Letters, Vol. 38, Issue 6 https://doi.org/10.1109/LED.2017.2697359	journal	June 2017
Enhancement-Mode Ga ₂ O ₃ Vertical Transistors With Breakdown Voltage >1 kV Hu, Zongyang; Nomoto, Kazuki; Li, Wenshen IEEE Electron Device Letters, Vol. 39, Issue 6 https://doi.org/10.1109/LED.2018.2830184	journal	June 2018
Current Aperture Vertical $\beta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping Wong, Man Hoi; Goto, Ken; Murakami, Hisashi IEEE Electron Device Letters, Vol. 40, Issue 3 https://doi.org/10.1109/LED.2018.2884542	journal	March 2019
Vertical Ga ₂ O ₃ Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm ² Allen, Noah; Xiao, Ming; Yan, Xiaodong IEEE Electron Device Letters, Vol. 40, Issue 9 https://doi.org/10.1109/LED.2019.2931697	journal	September 2019
Field-Plated Ga ₂ O ₃ Trench Schottky Barrier Diodes With a BV ² /$R_{\text{on,sp}}$ of up to 0.95 GW/cm ² Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang IEEE Electron Device Letters, Vol. 41, Issue 1 https://doi.org/10.1109/LED.2019.2953559	journal	January 2020
Growth of β-Ga ₂ O ₃ Single Crystals by the Edge-Defined, Film Fed Growth Method Aida, Hideo; Nishiguchi, Kengo; Takeda, Hidetoshi Japanese Journal of Applied Physics, Vol. 47, Issue 11 https://doi.org/10.1143/JJAP.47.8506	journal	November 2008
Ge doping of β-Ga ₂ O ₃ films grown by plasma-assisted molecular beam epitaxy Ahmadi, Elaheh; Koksaldi, Onur S.; Kaun, Stephen W. Applied Physics Express, Vol. 10, Issue 4 https://doi.org/10.7567/APEX.10.041102	journal	March 2017
Demonstration of β-(Al _x Ga ₁₋ _x ) ₂ O ₃ /β-Ga ₂ O ₃ modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun Applied Physics Express, Vol. 10, Issue 7 https://doi.org/10.7567/APEX.10.071101	journal	June 2017
Systematic investigation of the growth rate of β-Ga ₂ O ₃ (010) by plasma-assisted molecular beam epitaxy Okumura, Hironori; Kita, Masao; Sasaki, Kohei Applied Physics Express, Vol. 7, Issue 9 https://doi.org/10.7567/APEX.7.095501	journal	August 2014
Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition Lee, Sam-dong; Kaneko, Kentaro; Fujita, Shizuo Japanese Journal of Applied Physics, Vol. 55, Issue 12 https://doi.org/10.7567/JJAP.55.1202B8	journal	October 2016

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Growth and characterization of homoepitaxial β-Ga2O3 layers

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Growth and characterization of homoepitaxial β-Ga₂O₃ layers