Tunable UV generation at 286 nm by frequency tripling of a high-power mode-locked semiconductor laser
- Naval Research Laboratory, Washington, D.C. 20375-5670 (United States)
- Department of Earth and Planetary Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplifier gain element. The 429-nm second harmonic produced by a KNbO{sub 3} crystal was sum-frequency mixed with the 858-nm fundamental in a Li{sub 3}BO{sub 5} crystal, generating as much as 50{mu}W of power at 286 nm. {copyright} {ital 1995} {ital Optical} {ital Society} {ital of} {ital America}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165918
- Journal Information:
- Optics Letters, Journal Name: Optics Letters Journal Issue: 15 Vol. 20; ISSN OPLEDP; ISSN 0146-9592
- Country of Publication:
- United States
- Language:
- English
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