High-power 467-nm passively locked signal-resonant sum-frequency laser

Journal Article · Fri Dec 01 04:00:00 EST 1995 · Optics Letters

DOI:https://doi.org/10.1364/OL.20.002496· OSTI ID:434554

Wigley, P G ^[1]; Zhang, Q; Miesak, E; Dixon, G J ^[2]

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1. Center for Research and Education in Optics and Lasers, University of Central Florida, 12424 Research Parkway, Orlando, Florida 32826 (United States)
2. Department of Electrical Engineering and Center for Research and Education in Optics and Lasers, University of Central Florida, 12424 Research Parkway, Orlando, Florida 32826 (United States)

We have generated more than 120 mW of TEM{sub 00} radiation at 467 nm by summing the resonantly enhanced output of an 845-nm GaAlAs tapered semiconductor amplifier with the intracavity field of a 1047-nm diode-pumped Nd:YLF laser, using a KTP crystal. Optical feedback was used to lock the frequency of the tapered amplifier to a cavity resonance. {copyright} {ital 1995 Optical Society of America.}

• Sponsoring Organization: USDOE
• OSTI ID: 434554
• Journal Information: Optics Letters, Journal Name: Optics Letters Journal Issue: 24 Vol. 20; ISSN OPLEDP; ISSN 0146-9592
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DESIGN
FREQUENCY CONVERTERS
MILLIWATT POWER RANGE
PERFORMANCE
SOLID STATE LASERS
VISIBLE RADIATION