Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser
- Naval Research Laboratory, Washington, D.C. 20375-5672 (United States)
- Department of Earth and Planetary Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO{sub 3} crystal generated the 430-nm second harmonic, which was doubled by a {beta}-BaB{sub 2}O{sub 4} crystal, producing tunable UV radiation with as much as 15 {mu}W of average power.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 54923
- Journal Information:
- Optics Letters, Journal Name: Optics Letters Journal Issue: 10 Vol. 20; ISSN OPLEDP; ISSN 0146-9592
- Country of Publication:
- United States
- Language:
- English
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