Second-harmonic generation at 421 nm using injection-locked GaAlAs laser array and KNbO/sub 3/

Journal Article · Mon Sep 26 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100012· OSTI ID:6955918

Chun, M K; Goldberg, L; Weller, J F

Significant improvement in frequency doubling efficiency of a cw output of a GaAlAs laser diode is described. Up to 0.72 mW of 421 nm power was generated by illuminating a KNbO/sub 3/ crystal with a 270 mW diffraction-limited beam generated by an externally injection-locked laser diode array, operating in a single-mode and single-far-field lobe.

• Research Organization: Code 6570, Naval Research Laboratory, Washington, DC 20375-5000
• OSTI ID: 6955918
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:13; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKALI METAL COMPOUNDS
ELECTROMAGNETIC RADIATION
FREQUENCY MIXING
HARMONIC GENERATION
LASER MATERIALS
LASER RADIATION
LASERS
MATERIALS
MODE LOCKING
MODULATION
NIOBATES
NIOBIUM COMPOUNDS
OXYGEN COMPOUNDS
POTASSIUM COMPOUNDS
RADIATIONS
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TRANSITION ELEMENT COMPOUNDS