Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm
- State Univ. of New York (SUNY), Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Texas A & M Univ., College Station, TX (United States)
In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1658554
- Report Number(s):
- BNL--216334-2020-JAAM
- Journal Information:
- IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 17 Vol. 32; ISSN 1041-1135
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
2 {mu}m laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate
Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m