Two-step narrow ridge cascade diode lasers emitting near $$2~\mu$$ m
Journal Article
·
· IEEE Photonics Technology Letters
- State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- OSTI ID:
- 1368667
- Report Number(s):
- BNL--113990-2017-JA; KC0403020
- Journal Information:
- IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 6 Vol. 29; ISSN 1041-1135
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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