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Two-step narrow ridge cascade diode lasers emitting near $$2~\mu$$ m

Journal Article · · IEEE Photonics Technology Letters
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  1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI ID:
1368667
Report Number(s):
BNL--113990-2017-JA; KC0403020
Journal Information:
IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 6 Vol. 29; ISSN 1041-1135
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

References (10)

Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power journal May 2013
Measurement of true spontaneous emission spectra from the facet of diode laser structures journal January 2002
Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm journal July 2006
Gain spectra in GaAs double−heterostructure injection lasers journal March 1975
Diode lasers with asymmetric waveguide and improved beam properties journal June 2010
Reliable mid-infrared laterally-coupled distributed-feedback interband cascade lasers journal August 2014
High power cascade diode lasers emitting near 2 μm journal March 2016
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers journal July 2002
Narrow Ridge $\lambda \approx 3$ - $\mu \text{m}$ Cascade Diode Lasers With Output Power Above 100 mW at Room Temperature journal December 2015
High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm conference December 2013

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