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Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm

Journal Article · · Semiconductor Science and Technology
 [1];  [1];  [1];  [2];  [3];  [1];  [1]
  1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Texas A & M Univ., College Station, TX (United States)
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The GaSb-based diode lasers operating simultaneously at two wavelengths near 2.1 μm have been designed and fabricated. The Y-branch devices used the 6th order distributed Bragg reflectors (DBR) to provide spectrally selective feedback. The laser active region contained two asymmetric quantum wells with allowed optical transitions between two lowest electron (e1 and e2) and top hole (hh1) subbands. The laser emission lines loosely matched the e1-hh1 and e2-hh1 optical transitions with separation corresponding to ~3.1 THz. Finally, the 10 μm wide deeply etched straight ridge DBR lasers demonstrated stable single mode operation with more than 50 mW of output power.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
Grant/Contract Number:
SC0012704
OSTI ID:
1615593
Alternate ID(s):
OSTI ID: 23080209
Report Number(s):
BNL--213824-2020-JAAM
Journal Information:
Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Journal Issue: 2 Vol. 35; ISSN 0268-1242
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

References (9)

Room temperature continuous-wave operation of quantum-cascade lasers grown by metal organic vapour phase epitaxy journal January 2005
High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers journal January 2004
GaSb-based diode lasers with asymmetric coupled quantum wells journal August 2018
Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers journal April 2012
High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region journal May 2011
High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region journal May 2011
Dual-wavelength diode laser with electrically adjustable wavelength distance at 785  nm journal January 2016
Dual-wavelength diode laser with electrically adjustable wavelength distance at 785  nm journal January 2016
Recent progress in terahertz difference-frequency quantum cascade laser sources journal September 2018

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Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY