High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Jiang, Jiang; Shterengas, Leon; Kipshidze, Gela; Stein, Aaron; Belyanin, Alexey; Belenky, Gregory

doi:10.1364/ol.422536

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Journal Article · Thu Apr 15 00:00:00 EDT 2021 · Optics Letters

DOI:https://doi.org/10.1364/ol.422536· OSTI ID:1830201

Jiang, Jiang ^[1]; Shterengas, Leon ^[1]; Kipshidze, Gela ^[1]; ^[2]; ^[3]; Belenky, Gregory ^[1]

State Univ. of New York (SUNY), Stony Brook, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Texas A & M Univ., College Station, TX (United States)

Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ~850 mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. Finally, the devices operated at DBR line with detuning from gain peak exceeding 10 meV.

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)

Grant/Contract Number:: SC0012704

OSTI ID:: 1830201

Alternate ID(s):: OSTI ID: 1777509

Report Number(s):: BNL--222377-2021-JAAM

Journal Information:: Optics Letters, Journal Name: Optics Letters Journal Issue: 8 Vol. 46; ISSN 0146-9592

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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