2 {mu}m laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate

Journal Article · Mon Jun 10 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4808265· OSTI ID:22163017

Apiratikul, P.; He, L.; Richardson, C. J. K. ^[1]

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1. Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)

We report a type-I GaSb-based laterally coupled distributed-feedback (DFB) laser grown on a GaAs substrate operating continuous wave at room temperature. The laser structure was designed to operate near a wavelength of 2 {mu}m and was grown metamorphically with solid-source molecular beam epitaxy. The device was fabricated using a 6th-order deep etch grating structure as part of the sidewalls of the narrow ridge waveguide. The DFB laser emits total output power of up to 40 mW in a single longitudinal mode operation at a heat-sink temperature of 20 Degree-Sign C.

• OSTI ID: 22163017
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DESIGN
EMISSION
FEEDBACK
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
LASER MATERIALS
MOLECULAR BEAM EPITAXY
OPERATION
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
WAVEGUIDES
WAVELENGTHS