Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

Technical Report · Fri Feb 24 04:00:00 EST 2017

DOI:https://doi.org/10.2172/1344781· OSTI ID:1344781

Lavrova, Olga ^[1]; Balakrishnan, Ganesh ^[2]

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1. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; University of New Mexico
2. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

The etch rates of NH₄OH:H₂O₂ and C₆H₈O₇:H₂O₂ for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH₄OH:H₂O₂ solution has a greater etch rate differential for the GaSb/GaAs material system than C₆H₈O₇:H₂O₂ solution. The selectivity of NH₄OH:H₂O₂ for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C₆H₈O₇:H₂O₂ has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

• Research Organization: Univ. of New Mexico, Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: EE0004004
• OSTI ID: 1344781
• Report Number(s): DE--EE0004004
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE