Molecular-beam epitaxial growth of high-mobility n-GaSb
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Massachusetts Inst. of Technology, Lexington, MA (United States)
The electrical properties of MBE-grown GaSb have been investigated as a step toward obtaining n-AlGaSb epilayers with low carrier concentrations and high mobilities for high-performance photodetectors at 2 {mu}m and beyond. By doping with Te donors provided by a GaTe source, we have obtained n-GaSb layers, on (100) GaAs substrates, with Hall mobilities as high as 7600 and 12 600 cm{sup 2}V s at room temperature and 77 K, respectively. These values are {approximately} 50% greater than the highest previously reported values for n-GaSb epilayers grown on similar substrates. 13 refs., 4 figs., 1 tab.
- OSTI ID:
- 147028
- Report Number(s):
- CONF-9210296--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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