Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

GaN MISFET Trench Edge Calibrations.

Conference ·
OSTI ID:1645705

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Program (EE-2G)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1645705
Report Number(s):
SAND2019-9133PE; 678178
Country of Publication:
United States
Language:
English

Similar Records

TCAD simulation of a 1 kV 10 A GaN MISFET Device.
Conference · Thu Nov 01 00:00:00 EDT 2018 · OSTI ID:1806911

Bevel Edge Termination for Vertical GaN Power Diodes.
Conference · Sun Sep 01 00:00:00 EDT 2019 · OSTI ID:1642027

Bevel Edge Termination for Vertical GaN Power Diodes.
Conference · Tue Oct 01 00:00:00 EDT 2019 · OSTI ID:1642985

Related Subjects