Bevel Edge Termination for Vertical GaN Power Diodes.

Conference · Tue Oct 01 00:00:00 EDT 2019

DOI:https://doi.org/10.1109/WiPDA46397.2019.8998835· OSTI ID:1642985

Binder, Andrew; Binder, Andrew; Binder, Andrew; Binder, Andrew; Dickerson, Jeramy Ray; Dickerson, Jeramy Ray; Crawford, Mary H.; Crawford, Mary H.; Pickrell, Gregory; Pickrell, Gregory; Allerman, Andrew A.; Allerman, Andrew A.; Sharps, Paul; Sharps, Paul; Kaplar, Robert; Kaplar, Robert

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA), Office of Defense Science (NA-113)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1642985
• Report Number(s): SAND2019-12898C; 680706
• Country of Publication: United States
• Language: English