TCAD simulation of a 1 kV 10 A GaN MISFET Device.

Conference · Thu Nov 01 00:00:00 EDT 2018

OSTI ID:1806911

Dickerson, Jeramy Ray; Dickerson, Jeramy Ray; Dickerson, Jeramy Ray; Dickerson, Jeramy Ray; Kaplar, Robert; Kaplar, Robert; Kaplar, Robert; Kaplar, Robert; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Armstrong, Andrew; Armstrong, Andrew; Armstrong, Andrew; Armstrong, Andrew; Crawford, Mary H.; Crawford, Mary H.; Crawford, Mary H.; Crawford, Mary H. ; Allerman, Andrew A.; Allerman, Andrew A.; Allerman, Andrew A.; Allerman, Andrew A.; Pickrell, Gregory; Pickrell, Gregory; Pickrell, Gregory; Pickrell, Gregory

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1806911
• Report Number(s): SAND2018-12840C; 669877
• Country of Publication: United States
• Language: English