Impact of Interfacial Impurities on the Electrical Performance of Regrown Nonpolar (1010) GaN Vertical p-n Diodes.
Conference
·
OSTI ID:1641136
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1641136
- Report Number(s):
- SAND2019-7901C; 677284
- Country of Publication:
- United States
- Language:
- English
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