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U.S. Department of Energy
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Defect Investigation of Regrown Vertical GaN p-n Diodes Using Deep-Level Optical Spectroscopy.

Conference ·
OSTI ID:1641137
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1641137
Report Number(s):
SAND2019-7902C; 677285
Country of Publication:
United States
Language:
English

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