High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control.
Conference
·
OSTI ID:1582521
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1582521
- Report Number(s):
- SAND2018-9352D; 667351
- Resource Relation:
- Conference: Proposed for presentation at the PN DIODES Review Meeting held August 28-29, 2018 in Denver, CO.
- Country of Publication:
- United States
- Language:
- English
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