High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control.

Conference · Wed Aug 01 00:00:00 EDT 2018

OSTI ID:1582521

Armstrong, Andrew; Feezell, Daniel; Allerman, Andrew A.; Pickrell, Gregory; Monavarian, Morteza; Stricklin, Isaac; Crawford, Mary H.; Celio, Kimberlee Chiyoko; Leonard, Francois Leonard; Talin, Albert Alec

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1582521
• Report Number(s): SAND2018-9352D; 667351
• Resource Relation: Conference: Proposed for presentation at the PN DIODES Review Meeting held August 28-29, 2018 in Denver, CO.
• Country of Publication: United States
• Language: English